Due to strong demand for LEDs for lighting, Mitsubishi Chemical plans to invest 1 billion yen to double the monthly capacity of LED GaN substrates (from 2,000 to 4,000) by the fall of 2013.
According to reports, most of the current LED lighting uses sapphire substrates, but the GaN substrate produced by Mitsubishi Chemical has high output, stable illumination, etc. Compared with the sapphire substrate, the LED lighting power consumption of the GaN substrate can be reduced by 50. -70%, which can extend the life of lighting products, so orders from lighting factories have increased rapidly.
Mitsubishi Chemical has produced a 2-inch diameter GaN substrate at the Tsukuba Plant, with a monthly production of several hundred pieces. It is planned to increase production to 2,000 units by the end of this year. In addition to the Tsukuba Plant, Mitsubishi Chemical will introduce a GaN substrate production facility with a monthly capacity of 1,000 sheets (produced in a 4-inch diameter) at the Mizushima Plant, and will begin mass production in April 2013. In addition, it is planned to install a GaN substrate production facility (product diameter of 4 inches) with a monthly capacity of 1,000 pieces in the Mizushima Plant before the end of the fall of 2013. .
According to reports, most of the current LED lighting uses sapphire substrates, but the GaN substrate produced by Mitsubishi Chemical has high output, stable illumination, etc. Compared with the sapphire substrate, the LED lighting power consumption of the GaN substrate can be reduced by 50. -70%, which can extend the life of lighting products, so orders from lighting factories have increased rapidly.
Mitsubishi Chemical has produced a 2-inch diameter GaN substrate at the Tsukuba Plant, with a monthly production of several hundred pieces. It is planned to increase production to 2,000 units by the end of this year. In addition to the Tsukuba Plant, Mitsubishi Chemical will introduce a GaN substrate production facility with a monthly capacity of 1,000 sheets (produced in a 4-inch diameter) at the Mizushima Plant, and will begin mass production in April 2013. In addition, it is planned to install a GaN substrate production facility (product diameter of 4 inches) with a monthly capacity of 1,000 pieces in the Mizushima Plant before the end of the fall of 2013. .
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