Samsung announced on Wednesday that it is independent of the industry to produce SRAM (Static Random Access Memory) using a 10 nm FinFET process, which means that Samsung's 10 nm process technology may have surpassed TSMC (2330) and even Even the chip leader Intel (Intel) has been overtaken by Samsung.
SRAM is faster than DRAM and is often used as a cache memory for the central processing unit (CPU) to improve CPU access efficiency. TSMC and Intel are currently staying at 16 and 14 nm respectively in SRAM process technology.
Samsung's successful development of the new generation of SRAM, also on behalf of its processor process technology to 10 nanometers of the process is quite smooth, is expected to enter full-scale production in early 2017, will make Samsung compete for processor OEM orders occupy a favorable position. (ETnews.com)
Compared with 14nm SRAM, 10nm can reduce the storage area of ​​128MB memory unit by 37.5%. With the processor built by 10nm, it not only has faster computing performance but also takes up less space. Samsung hopes to commercialize 10 nanometers by the end of next year.
In addition, Samsung will also promote the planar NAND flash memory system technology from 16 nm to 14 nm, which will reduce production costs and improve the operating rate. Toshiba and Micron are still in the process of 15-16 nm, and believe that this is the ultimate in planar NAND memory technology, and will be developed towards 3D stacking. However, after Samsung made a breakthrough, perhaps the plane NAND has the possibility of further expansion.
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